HIGHLIGHTS
- who: C. Avogadri from the Laboratoire de Montpellier, Montpellier, France have published the research work: Large inverted band gap in strained three-layer InAs/GaInSb quantum wells, in the Journal: (JOURNAL) of 16/09/2022
- what: The authors report on the realization of a large inverted band gap in strained three-layer InAs/GaInSb QWs. The authors focus mainly on the HB6 device (S3198 sample). The authors demonstrate that this saturation is mainly caused by the conductivity via edge states.
SUMMARY
Time-reversal invariant two-dimensional (2D) topological insulators, also known . . .
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