HIGHLIGHTS
- who: In-Geun Lee and collaborators from the School of Electronics Engineering, Kyungpook National University (KNU), Daegu, Korea have published the research work: Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs with Regrown In0.53Ga0.47As Contacts, in the Journal: Electronics 2022, 2744 of /2022/
- what: This paper the authors report the fabrication and characterization of 50 (GAA) (NS) metal-oxide-semiconductor field-effect transistors (MOSFETs) with sub-20 thickness that were fabricated through an S/D regrowth process. The authors demonstrate GAA Inx Ga1-x
SUMMARY
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