Low frequency noise and trap density in gan/algan field effect transistors

HIGHLIGHTS

• who: P. Sai and colleagues from the Institut e of High Pressure Physics PAS, ulSokołowska, Warsaw, Poland Warsaw University have published the Article: Low frequency noise and trap density in GaN/AlGaN field effect transistors, in the Journal: (JOURNAL)
• what: The authors report experimental results on the low-frequency noise in GaN/AlGaN transistors fabricated under different conditions and evaluate different methods to extract the effective trap density using the McWhorter model.

SUMMARY

The authors report experimental results on the low-frequency noise in GaN/AlGaN transistors fabricated under different . . .

 



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