Low leakage current and high breakdown field algan/gan mis-hemts using pecvd-sinx as a gate dielectric

HIGHLIGHTS

• who: Xiaohui Gao et al. from the Nanjing University, Nanjing, China have published the research work: Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric, in the Journal: Micromachines 2022, 13, 1396. of /2022/
• what: The authors investigated the influence of SiNx deposition condition and surface treatment on the electrical properties of GaN-based MIS-HEMTs employing PECVD-SiNx as the gate dielectric.
• how: In this paper film deposited by plasma-enhanced chemical vapor deposition was employed dielectric of AlGaN/GaN high electron mobility . . .
  

   

  

  If you want to have access to all the content you need to log in!

  Thanks :)

  Username or E-mail:

  If you don't have an account, you can create one here.