HIGHLIGHTS
- who: . and colleagues from the Advanced Semiconductor Laboratory, King Abdullah University of Science and Technology, Department of Computer Science and Engineering, University of Notre Dame, Notre Dame, IN, USA have published the paper: Low Resistance Asymmetric III-Nitride Tunnel Junctions Designed by Machine Learning, in the Journal: Nanomaterials 2021, with 11, 2466 t iterations, of 22/09/2021
- what: The authors propose the p-AlGaN/i-InGaN/n-AlGaN TJ structure for the first time. The authors demonstrate, for the first time, machine_learning can be applied to alleviate the above-mentioned issues in the designing . . .
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