Low-temperature enhancement-mode amorphous oxide thin-film transistors in solution process using a low-pressure annealing

HIGHLIGHTS

• who: Won Park and colleagues from the School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, Republic of Korea have published the research work: Low-Temperature Enhancement-Mode Amorphous Oxide Thin-Film Transistors in Solution Process Using a Low-Pressure Annealing, in the Journal: Nanomaterials 2023, 2231 of /2023/
• what: 2 of 9 This work seeks to address the aforementioned issues by reporting the fabrication of enhancement-mode amorphous oxide TFTs at a low processing temperature of 200 u25e6 C using a solution process. The u03bc FE of oxide this study could be dramatically . . .
  

   

  

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