Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer

HIGHLIGHTS

• who: Yuan Li from the (UNIVERSITY) have published the Article: Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer, in the Journal: (JOURNAL) of 25/Oct/2021
• what: The authors propose a floating-gate memory with a structure of MoS2/hBN/MoS2/graphdiyne oxide/ WSe2, in which a threshold switching layer, graphdiyne oxide, instead of a dielectric blocking layer in conventional floating-gate memories, is used to connect the floating gate and control gate.

SUMMARY

Although a breakthrough in ultrafast floating-gate memory has been . . .

 



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