Magnetism in mn-nanowires and -clusters as δ-doped layers in group iv semiconductors (si, ge)

HIGHLIGHTS

• who: Ge et al. from the of Materials Science and Engineering, University of Virginia, McCormick Road, Charlottesville, Virginia, USA , Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California, USA ( Received have published the paper: Magnetism in Mn-nanowires and -clusters as δ-doped layers in group IV semiconductors (Si, Ge), in the Journal: (JOURNAL) of 18/01/2018

SUMMARY

The inherent complexity of the Mn-Si and Mn-Ge material systems owing to the coexistence of interstitial and substitutional sites, clusters, and compounds has generally impeded the understanding of magnetism in these systems. The . . .

 



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