Mechanism analysis and multi-scale protection design of gan hemt induced by high-power electromagnetic pulse

HIGHLIGHTS

• who: Lei Wang et al. from the Microelectronics, Xidian University, Xi'an, China have published the article: Mechanism Analysis and Multi-Scale Protection Design of GaN HEMT Induced by High-Power Electromagnetic Pulse, in the Journal: Micromachines 2022, 1288 of /2022/
• what: In this paper the damage effects of a high-power electromagnetic pulse (EMP) on the GaN highelectron-mobility transistor (HEMT) were investigated in detail. In this study, theModel underlying physical failure mechanism of the GaN HEMT under the injection of EMP is presented.
• how: Five device structures were proposed and their . . .
  

   

  

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