Mechanism understanding in cryo atomic layer etching of sio2 based upon c4f8 physisorption

HIGHLIGHTS

• who: G. Antoun from the Orlu00e9ans University have published the paper: Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption, in the Journal: Scientific Reports Scientific Reports of 15/09/2020
• what: The aim of the following part is to increase the process working temperature.

SUMMARY

The prepared samples are then introduced into an inductively coupled plasma reactor that is equipped with a diffusion chamber and a cryogenic substrate holder. The S­ iF3+ line intensity at 85 amu was also recorded, during an ALE process, to follow . . .

 



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