Memory impedance in tio based metal-insulator-metal devices

HIGHLIGHTS

• who: SUBJECT AREAS and colleagues from the CollegeNational University London, London , AZ, UK have published the research work: Memory Impedance in TiO based Metal-Insulator-Metal Devices, in the Journal: (JOURNAL) of 28/Oct/2013
• what: The authors demonstrate that TiO2-based metal-insulator-metal devices are more than just a memory-resistor. The authors show how non-zero crossing current-voltage hysteresis loops can appear and the authors experimentally demonstrate their frequency response as memcapacitive and meminductive effects become dominant.

SUMMARY

Received Published 31 March 2014 Large attention has recently . . .

 



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