HIGHLIGHTS
- who: Minsu Park and colleagues from the Division of Electronics and Electrical Engineering, Dongguk University, Seoul, Republic of Korea have published the Article: Memristors with Nociceptor Characteristics Using Threshold Switching of Pt/HfO2/TaOx/TaN Devices, in the Journal: Nanomaterials 2022, 4206 of /2022/
- what: In this study, Pt/TaOx /TaN (PTT) and Pt/HfO2 /TaOx /TaN (PHTT) were investigated. The previous studies focused on implementing self-rectifying characteristics using the TS feature of TaOx and HfO2 . The authors focused on this part to conduct the research .
- future: In accordance accordance with with . . .
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