Methodology for the investigation of threading dislocations as a source of vertical leakage in algan/gan-hemt heterostructures for power devices

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• who: S. Besendörfer et al. from the Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystr10, Erlangen, Germany Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Universitätsplatz, Magdeburg, Germany have published the Article: Methodology for the investigation of threading dislocations as a source of vertical leakage in AlGaN/GaN-HEMT heterostructures for power devices, in the Journal: (JOURNAL)
• what: The authors investigated an AlGaN/GaN-HEMT heterostructure for power devices grown on p-doped Si(111) by metal organic chemical vapor deposition (MOCVD).
• how: In this work an AlGaN . . .
  

   

  

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