HIGHLIGHTS
- who: Eric Tourniu00e9 from the (UNIVERSITY) have published the research: Mid-infrared III-V semiconductor lasers epitaxially grown on Si substrates, in the Journal: (JOURNAL)
- what: The authors focus the following of this review article on the epitaxial integration of MIR antimonide lasers on Si substrates. The authors show in Fig 6 the temperature-dependent data for a 8 u00d7 1500 u00b5m2 DL grown on 0.18u00b0 residual-miscut Si substrates.
- how: Remarkably this review shows that while diode are sensitive to residual crystal defects the quantum cascade and interband cascade grown on . . .
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