Modeling of ingan/si tandem cells: comparison between 2-contacts/4-contacts

HIGHLIGHTS

• who: El-Huni Walid and colleagues from the 507, CNRS, Centrale Supélec, UPsud, UPMC, Rue Joliot-Curie, Gif-sur-Yvette , France have published the research: Modeling of InGaN/Si tandem cells: comparison between 2-contacts/4-contacts, in the Journal: (JOURNAL)
• what: The authors aim to study the integration of InGaNbased semibulk-structured solar cell with Si-based solar cell for high-efficiency tandem cell. The authors show the modeling results for a 2-terminal InGaN/Si tandem cell. Using SILAVCOATLAS TCAD software, the authors have optimized this structure and the authors show, in . . .
  

   

  

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