Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic mnte

HIGHLIGHTS

• who: K. Vý and borný from the Charles University in Prague, Ke Karlovu, Praha , , Czech Republic, Institute of Physics, Academy of Science of the Czech Republic, Cukrovarnická have published the research work: Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe, in the Journal: NATURE COMMUNICATIONS NATURE COMMUNICATIONS of 14/04/2016
• what: The authors demonstrate a memory device in epitaxial MnTe an antiferromagnetic counterpart of common II-VI semiconductors. For comparison, the authors show in Fig 2a,b also 2 T AMR curves measured at a low temperature (5 K). In Fig 2c . . .
  

   

  

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