N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of sio2/4h-sic interfaces

HIGHLIGHTS

• who: Hironori Yoshioka (吉岡裕典 et al. from the RandD Partnership for Future Power Electronics Technology, Tsukuba, Japan have published the research: N-channel field-effect mobility inversely proportional to the interface state density at the conduction band edges of SiO2/4H-SiC interfaces, in the Journal: (JOURNAL) of 12/Nov/2014
• what: The authors evaluate DIT over the very shallow range of 0.00 eV and amp;lt;EC-ET based on the deterioration of the subthreshold slope by decreasing the temperature to 11 K, and show the correlation between DIT near EC and µFE,peak . . .
  

   

  

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