HIGHLIGHTS
- who: Yudai Hemmi and collaborators from the Research Center for Organic Electronics (ROEL), Yamagata University, Jonan, Yonezawa, Yamagata, Japan have published the article: N-Type Printed Organic Source-Gated Transistors with High Intrinsic Gain, in the Journal: Nanomaterials 2022, 4441 of /2022/
- what: The authors show the first n-type OSGTs which are printed and have a high over 40.
SUMMARY
SGTs structurally resemble FETs but rely on three primary conditions: a source-semiconductor Schottky barrier, the semiconductor layer sandwiched between the source and the insulator/gate, as in the case . . .
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