Nm alsb/inas hemt for ultra-low-power consumption, low-noise applications

HIGHLIGHTS

• who: Cyrille Gardès et al. from the Institut d'Électronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS, Université Lille I, BP, Villeneuve d'Ascq , France have published the paper: nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications, in the Journal: (JOURNAL) of 23/02/2014
• what: The authors report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime.

SUMMARY

Though the best high frequency performances . . .

 



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