HIGHLIGHTS
- who: G. Lakshmi Priya and colleagues from the Centre for Innovation and Product Development, Vellore Institute of Technology, Chennai, India have published the paper: Novel Low Power Cross-Coupled FET-Based Sense Amplifier Design for High-Speed SRAM Circuits, in the Journal: Micromachines 2023, 581 of /2023/
- what: Throughout this research various power reduction approaches were explored and the optimal solution has been implemented in the own modified SRAM design. In this Article the effect of power consumption and the reaction time of the suggested amplifier were also examined by adjusting the width-to-length . . .
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