Novel step floating islands vdmos with low specific on-resistance by tcad simulation

HIGHLIGHTS

  • who: Dongyan Zhao and colleagues from the School of Microelectronics, Xidian University, No, South TaiBai Road, Xi`an, China have published the Article: Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation, in the Journal: Micromachines 2022, 573 of 29/03/2022
  • what: __SECTION__ 4. Conclusions.

SUMMARY

    Received: 8 March 2022 Vertical Double-diffusion Metal Oxide Semiconductor (VDMOS) is an important component in the field of power semiconductor devices and has been widely used due to its high switching speed, low loss, and high breakdown voltage (BV . . .

     

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