HIGHLIGHTS
- who: Jiu0159u00ed Beru00e1nek et al. from the Faculty of Nuclear Sciences and Physical Engineering, Technical University in have published the research: On the Melting Thresholds of Semiconductors under Nanosecond Pulse Laser Irradiation, in the Journal: (JOURNAL)
- what: The authors compare results obtained in the modeling with available experimental data and theoretical predictions on the damage (melting) thresholds and characteristics of the melting stage (its duration and melting depth). The main reason for this can be seen in the difference in the absorption coefficient change with temperature. The model implements the same optical and temperature-de . . .
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