HIGHLIGHTS
- who: Xiaoguang Chai et al. from the University of Chinese Academy of Sciences, Beijing, China have published the paper: Online Junction Temperature Measurement of Double-sided Cooling IGBT Power Module through On-state Voltage with High Current, in the Journal: (JOURNAL)
- what: The aim of this study is to achieve online monitoring of the junction temperature of double-sided-cooling insulated gate bipolar transistor (IGBT) power modules by using the on-state voltage under a high current to maximize the utilization of IGBT power chips.
- future: In future work the on-state voltage . . .
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