HIGHLIGHTS
- who: Ningping Shi and colleagues from the School of Materials Science and Engineering, Key Laboratory of New Processing Technology for Nonferrous Nonferrous Metal Deposits and Efficient Utilization of Resources, Guilin University of Technology, Ningbo Haitechuang Electric Control Co, Ltd, Ningbo, China have published the Article: Optimization AlGaN/GaN HEMT with Field Plate Structures, in the Journal: Micromachines 2022, 702 of /2022/
- what: In this paper, AlGaN/GaN HEMT devices with different field plate structures are investigated.
SUMMARY
By optimizing the gate field plate length (LGFP ), source field plate length (LSFP ), and . . .
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