HIGHLIGHTS
- who: Max Krakers from the MESA+ Institute of Nanotechnology, University of Twente, Enschede, The Netherlands have published the research: Optoelectrical Operation Stability of Broadband PureGaB Ge-on-Si Photodiodes with Anomalous Al-Mediated Sidewall Contacting, in the Journal: (JOURNAL)
- what: In this paper, the anomalous Al-mediated material transport is investigated in relation to the degree to which it does or does not degrade the broadband optoelectronic PureGaB photodiode performance. The aim of the optoelectrical measurements was to couple the electrical low-voltage I-V diode characteristics to the corresponding optical responsivity.
- how . . .
If you want to have access to all the content you need to log in!
Thanks :)
If you don't have an account, you can create one here.