HIGHLIGHTS
- who: Porous silicon Thermal oxidation et al. from the Instituto Investigaciones en Materiales, Universidad Nacional , Mexico DF, Mexico have published the research work: Oxygen Absorption in Free-Standing Porous Silicon: A Structural, Optical and Kinetic Analysis, in the Journal: (JOURNAL)
- what: The authors report a multi-approach study of the thermal oxidation in PSi by correlating the oxygen-absorption process with their structural and optical properties.
SUMMARY
Silicon, being the second most abundant element in the Earth's crust after oxygen, is the base of nowadays microelectronics. In fact, the storage . . .
If you want to have access to all the content you need to log in!
Thanks :)
If you don't have an account, you can create one here.