HIGHLIGHTS
- who: Ge-Qi Mao et al. from the Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, China have published the research: Oxygen migration around the filament region in HfOx memristors, in the Journal: (JOURNAL)
- what: According to the thermodynamic calculation of McKenna,33 as well as the O vacancy chain cohesion study from Xue et_al,34 it is reasonable to attribute the CF in HfOx memristors to those hexagonal phases close to metal Hf, such as Hf2 O, Hf3 O, Hf6 O and Hf . . .
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