Oxygen vacancy mediated band-gap engineering via b-doping for enhancing z-scheme a-tio2/r-tio2 heterojunction photocatalytic performance

HIGHLIGHTS

  • who: Changqing Liu and colleagues from the School of Material Science and, Shaanxi Key Laboratory of Green Preparation and Functionalization for Inorganic Materials, Shaanxi University of Science and Technology, Xi`an, China have published the research work: Oxygen Vacancy Mediated Band-Gap Engineering via B-Doping for Enhancing Z-Scheme A-TiO2/R-TiO2 Heterojunction Photocatalytic Performance, in the Journal: Nanomaterials 2023, 794 of /2023/
  • what: __SECTION__ 4. Conclusions.
  • how: The authors developed an effective approach to in situ formation of a Z-scheme B-doped A-TiO2 /R-TiO2 phase junction with . . .

     

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