HIGHLIGHTS
SUMMARY
The authors demonstrate the stable operation of a photocathode comprising Si and GaN, the two most produced semiconductors in the world, for 3,000 hrs without any performance degradation in twoelectrode configurations. Measurements in both three- and two-electrode configurations suggest that surfaces of the GaN nanowires on Si photocathode transform in situ into Ga-O-N that drastically enhances hydrogen evolution and remains stable for 3,000 hrs. The synthesis and fabrication of n+-GaN nanowires/Si p-n junction photocathodes are discussed in the Methods section. In contrast, after Pt cocatalyst deposition . . .
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