Performance comparison of si igbt and sic mosfet power module driving ipmsm or im under wltc

HIGHLIGHTS

• who: Hirokatsu Umegami and colleagues from the Research and Development Center, ROHM Co, Ltd, Kyoto, Japan have published the research: Performance Comparison of Si IGBT and SiC MOSFET Power Module Driving IPMSM or IM under WLTC, in the Journal: IPMSM IM
• what: __SECTION__ 4. Conclusions.
• how: In this paper a type of Si IGBTs and three types of ROHM SiC MOSFETs are applied to a three-phase two-level inverter assuming application to EVs. The authors employed a simplified calculation as follows EC=ECDC /D 5 of 10 where EC is the energy . . .
  

   

  

  If you want to have access to all the content you need to log in!

  Thanks :)

  Username or Email

  Password

  Remember me

  Lost your password?

  If you don't have an account, you can create one here.