Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained ge0.964sn0.036/ge multiple quantum wells by quantum modelling

HIGHLIGHTS

  • who: N. yahyaoui and colleagues from the Laboratoire la Matière Condensée Nanosciences (LMCN), Département Physique, Faculté , France have published the research: Performance evaluation of high-detectivity p-i-n infrared photodetector based on compressively-strained Ge0.964Sn0.036/Ge multiple quantum wells by quantum modelling, in the Journal: (JOURNAL)
  • what: The authors propose a p-i-n infrared photodetector with an intrinsic absorbing layer formed by straincompensated Ge/Ge0.964Sn0.036/Ge multi-quantum wells.

SUMMARY

    The optical response of thin vertical Ge- based high frequency photodetectors at . . .

     

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