Performance improvement of ingan-based leds via a current-blocking region prepared via hydrogen passivation

HIGHLIGHTS

• who: Pavel Kirilenko et al. from the Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia have published the paper: Performance Improvement of InGaN-Based LEDs via a Current-Blocking Region Prepared via Hydrogen Passivation, in the Journal: Crystals 2022, 12, 1733. of /2022/
• what: The authors report p-GaN plasma used to create regions (CBRs) in InGaN-based green LEDs with standard dimensions of 280 u00d7 650 u00b5m2.
• how: In this experiment p-GaN selective passivation via hydrogen plasma was utilized to improve the external quantum efficiency of . . .
  

   

  

  If you want to have access to all the content you need to log in!

  Thanks :)

  Username or E-mail:

  If you don't have an account, you can create one here.