HIGHLIGHTS
- who: Photocurrent et al. from the Toyota Technological Institute, Hisakata, Tenpaku-ku, Nagoya-shi, Japan have published the Article: Photocurrent and photoluminescence characteristics of AlGaAs/GaAs double-heterostructures with a pair of two-dimensional electron and hole channels, in the Journal: (JOURNAL) of 11/09/2017
- what: To disclose how electrons and holes in these systems behave, the authors investigate in the present paper, their a) photocurrent and photoluminescence (PL) characteristics to clarify how they depend on the bias voltage (0.7 V to 2 V) and on the strength of photoexcitation. The authors show . . .
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