Photoelectrical performances of semiconductor-based devices having cofe and cofeni magnetic interlayers

HIGHLIGHTS

• What: This study was designed to examine the photoelectric device performances of cobalt-iron (CoFe) and cobalt-iron-nickel (CoFeNi) materials with good properties specifically to investigate the effect of the Ni element on the electrical properties. In this study, CoFeNi material was obtained by adding Ni metal to CoFe material, and the electrical and photoelectric properties of the prepared materials, whose magnetic properties have been studied many times in the literature, were investigated. The c values of the semiconductor-based photodiodes produced in this study with CoFe and CoFeNi thin film interfacial layers were obtained as . . .
  

   

  

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