Physical origins of current and temperature controlled negative differential resistances in nbo2

HIGHLIGHTS

• who: Suhas Kumar from the , Page Mill Road, , Stanford University have published the paper: Physical origins of current and temperature controlled negative differential resistances in NbO2, in the Journal: NATURE COMMUNICATIONS NATURE COMMUNICATIONS
• what: The authors examine nano and microscale NbO2 memristors that exhibit both a current-controlled and a less frequently observed temperature-controlled NDR.

SUMMARY

The authors fabricated nanometer-scale NbO2 devices using a sub-100 nm diameter metallic TiN plug to contact a blanket thin film of amorphous NbO2 (Fig 1a, b), the construction of which is described . . .

 



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