HIGHLIGHTS
- who: Sunjae Kim and collaborators from the Department of Materials Science and Engineering, Korea Aerospace University, Goyang, Republic of Korea have published the Article: Plasma Nitridation Effect on -Ga2O3 Semiconductors, in the Journal: Nanomaterials 2023, 1199 of /2023/
- what: __SECTION__ Conclusions.
- how: 4 of 7 Furthermore the PL decay profiles at 510 nm are presented at different PN treatment times and the results are compared in Figure 2c. The results showed that the photocurrent increased with PN treatment time.
SUMMARY
Through the electron trap sites below the CB, electrons . . .
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