HIGHLIGHTS
- who: Huixin Xiu and colleagues from the School of Materials and Chemistry, University of Shanghai for Science and Technology, Jungong Road, Yangpu District, Shanghai, China have published the Article: Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopy, in the Journal: (JOURNAL)
SUMMARY
Cubic zincblende (zb) III-nitrides grown in the orientation are technologically promising semiconductor materials due to the absence of polarization fields and the associated unwanted quantum-confined Stark effect when strained biaxially their smaller bandgaps compared to the commonly used hexagonal wurtzite (wz) phases,2 and . . .
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