HIGHLIGHTS
- who: Jiangtao Huang and colleagues from the College of New Materials and New Energies, Shenzhen Technology University, Shenzhen, China have published the research: Porous BiVO4/Boron-Doped Diamond Heterojunction Photoanode with Enhanced Photoelectrochemical Activity, in the Journal: Molecules 2022, 5218 of /2022/
- what: A series of porous BiVO4 /BDD heterojunction photoanodes were successfully fabricated by growing BiVO4 films with different thickness on the BDD films.
- how: To further evaluate the electronic structure an ultraviolet photoelectron spectroscopy (UPS) was conducted to determine the band edge positions of BDD and BiVO4. Determined by the Tauc . . .
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