SUMMARY
SiO2 began to be used as active and passive elements in silicon functional blocks, as well as anti-reflective coatings (ARC) in photoreceiving devices; this led to a new intensive study, it would seem, of the oxidation process and the properties of the oxide layer. Conditions for the growth of nanometer films of silicon oxide are actively studied and modeled, which is relevant for miniaturization and increasing the speed of electronic elements. A quantitative model of the formation of a fixed charge in silicon dioxide during thermal oxidation was developed. It was established that the amount of . . .
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