Properties of scalmgo4 as substrate for nitride semiconductors

HIGHLIGHTS

  • who: Takashi Matsuoka et al. from the New Industry Creation Hatchery Center, Tohoku University, Sendai, Japan have published the paper: Properties of ScAlMgO4 as Substrate for Nitride Semiconductors, in the Journal: Crystals 2023, 449 of /2023/
  • what: In this paper, the characteristics of SCAM with respect to lattice-constant, thermal expansion coefficient, thermal conductivity, and optical characteristics, which are indispensable for the device applications of SCAM, are systematically described.
  • how: The polarized detection was tested for the phonon mode assignment. Ellipsometric data were analyzed using CompleteEase (J.A. Woollam M-2000DI 645 M . . .

     

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