HIGHLIGHTS
- who: (Received and collaborators from the Department of Physics, SUPA, University of Strathclyde, Glasgow , NG, UK have published the Article: Quantification of Trace-Level Silicon Doping in Al Ga N Films Using Wavelength-Dispersive X-Ray Microanalysis, in the Journal: (JOURNAL)
- what: The aim of this study was to explore the use of WDX in a commercial EPMA (JEOL JXA-8530F) to simultaneously measure the concentration of major (alloy) and minor (dopant) elements within semiconductor epilayers at specific points on the sample surface. These samples (marked by the gray circle) are thus considered not suitable . . .
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