Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

HIGHLIGHTS

• who: S. Tongay and colleagues from the Materials Science and Engineering, University of Florida, Gainesville, Florida, USA have published the article: Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes, in the Journal: (JOURNAL) of 17/01/2012
• what: Florida Gainesville Florida 32611 USA Department of Physics University of Florida Gainesville Florida 32611 USA Nanoscience Institute for Medical and Engineering Technology University of Florida Gainesville Florida 32611 USA Using current-voltage (I-V) capacitance-voltage (C-V) and electric-field-modulated Raman measurements the authors report on the unique physics and promising technical applications . . .
  

   

  

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