Reducing charge noise in quantum dots by using thin silicon quantum wells

HIGHLIGHTS

• who: Brian Paquelet Wuetz from the (UNIVERSITY) have published the paper: Reducing charge noise in quantum dots by using thin silicon quantum wells, in the Journal: (JOURNAL) of 30/09/2022
• what: The authors demonstrate thin quantum wells in 28Si/SiGe heterostructures with low and uniform charge noise, measured over several gate-defined quantum dot devices. By linking charge noise measurements to the scattering properties of the two-dimensional electron gas, the authors show that a quiet environment for quantum dots is obtained by improving the semiconductor/dielectric interface and the crystalline quality of the . . .
  

   

  

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