Reduction of white spot defects in cmos image sensors fabricated using epitaxial silicon wafer with proximity gettering sinks by ch2p molecular ion implantation

HIGHLIGHTS

• who: Takeshi Kadono et al. from the SUMCO Corporation, Kubara, Yamashiro-cho, Imari-shi, Saga, Japan Faculty of Engineering, University of Miyazaki, Gakuen-kibanadai-Nishi, Miyazaki, Japan have published the research: Reduction of White Spot Defects in CMOS Image Sensors Fabricated Using Epitaxial Silicon Wafer with Proximity Gettering Sinks by CH2P Molecular Ion Implantation, in the Journal: Sensors 2022, 8258 of /2022/
• what: In icon wafer. this study, the authors characterized the gettering capability of the CH2 P-molecular-ion-implanted epitaxial silicon wafer by comparing the number of white spot defects obtained by the . . .
  

   

  

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