HIGHLIGHTS
- who: VLSI DESIGN and colleagues from the Department of Electrical and Electronics Engineering, Kobe University, Rokkodai, Nada, Kobe, Japan have published the Article: Reprints available directly from the publisher Photocopying permitted by license only (C) (Overseas Association), in the Journal: (JOURNAL)
- what: The authors show numerical results compared with those calculated by the conventional two band model for a GaAs ITD and a Si ITD, respectively. The authors focus on quantum transport in a Si and a GaAs p +-n + ITD as schematically illustrated in Figure 1.
SUMMARY
Temperature operations have . . .
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