Research update: ab initio study on resistive memory device optimization trends: dopant segregation effects and data retention in hfo2−x

HIGHLIGHTS

• who: Blanka Magyari-Köpe et al. from the DepartmentStanford University, Stanford, California, USA have published the research work: Research Update: Ab initio study on resistive memory device optimization trends: Dopant segregation effects and data retention in HfO2−x, in the Journal: (JOURNAL) of 31/05/2018
• what: This approach has achieved comparable accuracy to quasiparticle Magyari-Köpe et_al APL Mater.
• how: The authors used 3 × 3 × 3 supercells measuring about 15 Å × 15 Å × 15 Å of monoclinic HfOx with 106 Hf 210 O and up to 2 dopant atoms.

SUMMARY

 



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