Restricted-access al-mediated material transport in al contacting of puregab ge-on-si p n diodes

HIGHLIGHTS

• who: AMIR SAMMAK and collaborators from the -Department of Microelectronics, Delft University of Technology, Delft, The Netherlands have published the article: Restricted-Access Al-Mediated Material Transport in Al Contacting of PureGaB Ge-on-Si p n Diodes, in the Journal: (JOURNAL) of September/24,/2015
• what: In this paper, the use of nanometer-thin pure boron (PureB) layers as interdiffusion barrier to aluminum (Al) metallization is investigated for the fabrication of p+n infrared Ge photodiodes with a layer stack of silicon oxide (SiO2), PureB and pure gallium (PureGa) as light-entrance windows. While . . .
  

   

  

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