HIGHLIGHTS
- who: InGaAs layers on et al. from the DepartmentYale University have published the paper: Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110), in the Journal: (JOURNAL) of 21/Dec/2016
- what: The aim of this paper is to present comprehensive review of the literature concerning growth by molecular beam epitaxy (MBE) of III-Vs and_(110) substrates. The authors show that each substrate orientation requires a different growth strategy to optimize material properties, which typically differs greatly from what is used for growth . . .
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