Review of ge(gesn) and ingaas avalanche diodes operating in the swir spectral region

HIGHLIGHTS

• who: Yuanhao Miao et al. from the Integrated Circuit and System, Guangzhou, China Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing, China have published the Article: Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region, in the Journal: Nanomaterials 2023, 606 of /2023/
• what: The aim of this review Article is to provide a full understanding of Ge(GeSn) and for with a focus on APD operation in the SWIR spectral region which can be integrated onto the Si platform and is potentially compatible with CMOS technology. They . . .
  

   

  

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