Review on resistive switching devices based on multiferroic bifeo3

HIGHLIGHTS

  • who: Xianyue Zhao et al. from the Institute for Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg, Jena, Germany have published the paper: Review on Resistive Switching Devices Based on Multiferroic BiFeO3, in the Journal: Nanomaterials 2023, 13, 1325. of /2023/
  • what: The aim of this review is to provide a summary of the current understanding of the complex switching mechanism and RS behavior of BFO-based memristive devices and to explore their interrelationships to offer valuable insights for improving the practical performance of these devices.

SUMMARY

    Resistive Switching Devices Based . . .

     

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